Infineon IPD80R2K7C3A: High-Performance Power MOSFET for Efficient Switching Applications

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this need, the Infineon IPD80R2K7C7C3A stands out as a benchmark high-performance power MOSFET engineered to excel in a wide array of demanding applications. This device is a cornerstone for designers aiming to push the boundaries of performance in power conversion systems.

At the heart of this MOSFET's superiority is its advanced CoolMOS™ C7 superjunction technology. This proprietary technology from Infineon is pivotal in achieving an exceptional low specific on-state resistance (R DS(on)) of just 2.7 mΩ maximum. This ultra-low resistance is a critical factor, as it directly translates to minimized conduction losses during operation. When a device allows current to flow with less opposition, less energy is wasted as heat, leading to cooler operation and a significantly more efficient system overall.

Beyond its stellar static performance, the IPD80R2K7C3A is optimized for fast and efficient switching. The technology ensures extremely low gate charge (Q G ) and low output charge (Q oss ), which are essential parameters for reducing switching losses, especially in high-frequency applications. This allows power supply designers to increase the switching frequency of their designs without incurring a prohibitive efficiency penalty. Higher switching frequencies, in turn, enable the use of smaller passive components like inductors and transformers, directly contributing to a reduction in the overall size and weight of the end product.

The robustness of this MOSFET is further highlighted by its excellent reverse recovery characteristics. The body diode exhibits a soft recovery behavior, which is crucial for minimizing electromagnetic interference (EMI) and voltage overshoots in circuits like power factor correction (PFC) and bridge topologies. This inherent robustness enhances system reliability and simplifies EMI filtering design challenges.

Housed in a TOLL (TO-leadless) package, the IPD80R2K7C3A offers a compact footprint with superior thermal and electrical performance. The package's low parasitic inductance is ideal for high-speed switching, and its exposed top side allows for efficient heat dissipation through an attached heatsink, ensuring the device remains cool under heavy load conditions.

Target Applications include:

Server & Telecom SMPS (Switch-Mode Power Supplies)

High-end PC power supplies and gaming consoles

Solar inverters and energy storage systems

Industrial motor drives and automation

Electric vehicle charging infrastructure

ICGOOODFIND: The Infineon IPD80R2K7C3A is a top-tier power MOSFET that masterfully balances ultra-low conduction losses with fast switching capabilities. Its foundation in CoolMOS™ C7 technology makes it an ideal choice for high-efficiency, high-power-density designs across industrial, computing, and renewable energy sectors. It is a key enabler for engineers striving to meet stringent energy efficiency standards like 80 PLUS Titanium.

Keywords: Power MOSFET, CoolMOS C7, High-Efficiency, Low RDS(on), Fast Switching